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29LV00 C102M 00112 TDA8569Q HT14X11 CM1801 1N5256B 40404
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  Datasheet File OCR Text:
 Power Transistors
2SD2222
Silicon NPN triple diffusion planar type Darlington
For power amplification Complementary to 2SB1470
3.30.2 5.00.3 3.0
Unit: mm
20.00.5
s Features
q q q
6.0
1.5
1.5
Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
20.00.5 2.5
2.00.3 3.00.3 1.00.2
(TC=25C)
Ratings 160 160 5 15 8 150 3.5 150 -55 to +150 Unit V V V A
2.70.3
0.60.2 5.450.3 10.90.5
1
2
3
A W C C
1:Base 2:Collector 3:Emitter TOP-3L Package
Internal Connection
C B
E
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
*h
(TC=25C)
Symbol ICBO ICEO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 160V, IE = 0 VCE = 160V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 7A IC = 7A, IB = 7mA IC = 7A, IB = 7mA VCE = 10V, IC = 0.5A, f = 1MHz IC = 7A, IB1 = 7mA, IB2 = -7mA, VCC = 50V 20 2 6 1.2 160 10000 3500 20000 3 3 V V MHz s s s min typ max 100 100 100 Unit A A A V
FE2
Rank classification
Q P
Rank hFE2
3500 to 10000 7000 to 20000
2.0
1.5
Optimum for 120W HiFi output High foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat)
26.00.5
10.0
2.0
4.0
3.0
1
Power Transistors
PC -- Ta
200 10 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) Without heat sink (PC=3.5W) TC=25C 9 IB=1.0mA
2SD2222
IC -- VCE
Collector to emitter saturation voltage VCE(sat) (V)
100 IC/IB=1000 30 10 3 1 0.3 0.1 0.03 0.01 0.1 TC=-25C 25C 125C
VCE(sat) -- IC
Collector power dissipation PC (W)
180 160 140 120 100 80 60 40 20 (2) (3) 0 0 20 (1)
Collector current IC (A)
8 7
0.9mA 0.8mA
6 0.7mA 5 4 3 2 1 0.3mA 0 0.6mA
0.5mA 0.4mA
40
60
80 100 120 140 160
0
2
4
6
8
10
12
14
16
0.3
1
3
10
30
100
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) -- IC
100 105
hFE -- IC
104
Cob -- VCB
Collector output capacitance Cob (pF)
VCE=5V IE=0 f=1MHz TC=25C 103
Base to emitter saturation voltage VBE(sat) (V)
IC/IB=1000 30 10 3 1 0.3 0.1 0.03 0.01 0.1
Forward current transfer ratio hFE
104
TC=-25C 25C 125C
TC=125C 103
-25C
102
25C 102
10
0.3
1
3
10
30
100
10 0.03
0.1
0.3
1
3
10
30
1 0.1
0.3
1
3
10
30
100
Collector current IC (A)
Collector current IC (A)
Collector to base voltage VCB (V)
ton, tstg, tf -- IC
100 30 Pulsed tw=1ms Duty cycle=1% IC/IB=1000 (-IB1=IB2) VCC=50V TC=25C tstg 3 ton 1 tf 0.3 0.1 0.03 0.01 0 2 4 6 8 10 12
Area of safe operation (ASO)
100 30 ICP Non repetitive pulse TC=25C
Switching time ton,tstg,tf (s)
Collector current IC (A)
10
10 3 1 0.3 0.1 0.03 0.01 1 3
IC
t=1ms 10ms DC
10
30
100
300
1000
Collector current IC (A)
Collector to emitter voltage VCE (V)
2
Power Transistors
Rth(t) -- t
104 (1) PT=10V x 0.3A (3W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink
2SD2222
Thermal resistance Rth(t) (C/W)
103
102 (1) 10
(2)
0
10-1 10-4
10-3
10-2
10-1
1
10
102
103
104
Time t (s)
3


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